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The temperature detection circuit of common IGBT modules is mostly caused by the internal or external temperature sensor of the module (mostly a negative temperature coefficient thermistor), and a voltage divider circuit of +5V is formed in series with the resistor, thereby converting the temperature change signal into a voltage signal. Directly or after being processed by a voltage follower, it is sent to the MCU pin. The detection signal is an analog voltage signal.
The module temperature detection circuit of the low-power inverter is composed of a temperature sensor and a 555 time-base circuit to form a multi-stable (also called multi-vibrator) circuit. The low-level width of the 3-pin output pulse represents a temperature signal. The temperature detection signal is obtained by D-A conversion of the subsequent stage circuit (MCU).
C37, C38 charging time is determined by R2, D32, the time constant is small, corresponding to the high-level width of the 3-pin output pulse; the discharge time of C37, C38 is determined by the parallel value of RT, R3, the time constant is large, corresponding to 3 The low-level width of the pin output pulse.
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